Silicon Carbide (SiC) Schottky diode, as unipolar devices, exhibits ideal reverse recovery characteristics without minority carrier storage, which can meet the needs of high frequency applications.

Lonten SiC Schottky diode structure is a combination of a Schottky barrier diode (SBD) structure and a P-i-N junction diode structure. Therefore, the product shows strong surge current capability. And, advanced thinning technology and field limiting ring termination structure are used to achieve a good compromise among on-state voltage drop, breakdown voltage and reverse recovery performance.