LonOPT^TM lGBT is the lGBT family of Lonten, which uses the leading Field-Stop technology and the trench gate structure to achieve a good compromise of on-state voltage drop, switching loss and device robustness. The speclal lEGT structure is used to enhance the carrier concentration on the emitter side and the effect of conductance modulation is further enhanced, so that the saturation voltage of lGBT is reduced and the device performance is further optimized.